دیتاشیت HD60N08(AGF)
مشخصات دیتاشیت
| نام دیتاشیت |
HD60N08(AGF)
|
| حجم فایل |
81.734
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HL(Haolin Elec) HD60N08(AGF)
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
85W
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Total Gate Charge (Qg@Vgs):
36nC@10V
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Drain Source Voltage (Vdss):
80V
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Input Capacitance (Ciss@Vds):
2498pF@25V
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Continuous Drain Current (Id):
60A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
80pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
13mΩ@10V,40A
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Package:
TO-252
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Manufacturer:
HL(Haolin Elec)
